? semiconductor components industries, llc, 2002 march, 2002 ? rev. 1 483 publication order number: BF245A/d n ? channel ? depletion maximum ratings rating symbol value unit drain ? source voltage v ds 30 vdc drain ? gate voltage v dg 30 vdc gate ? source voltage v gs 30 vdc drain current i d 100 madc forward gate current i g(f) 10 madc total device dissipation @ t a = 25 c derate above 25 c p d 350 2.8 mw mw/ c storage channel temperature range t stg ? 65 to +150 c device package shipping ordering information BF245A to ? 92 to ? 92 case 29 style 23 5000 units/box 3 2 1 x= a or b y = year ww = work week marking diagram bf 245x yww http://onsemi.com bf245b to ? 92 5000 units/box
BF245A, bf245b http://onsemi.com 484 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate ? source breakdown voltage (i g = 1.0 adc, v ds = 0) v (br)gss 30 ? ? vdc gate ? source (v ds = 15 vdc, i d = 200 adc) BF245A, bf245b v gs 0.4 1.6 ? ? 2.2 3.8 vdc gate ? source cutoff voltage (v ds = 15 vdc, i d = 10 nadc) v gs(off) ? 0.5 ? ? 8.0 vdc gate reverse current (v gs = 20 vdc, v ds = 0) i gss ? ? 5.0 nadc on characteristics zero ? gate ? voltage drain current (v ds = 15 vdc, v gs = 0) BF245A bf245b i dss 2.0 6.0 ? ? 6.5 15 madc small ? signal characteristics forward transfer admittance (v ds = 15 vdc, v gs = 0, f = 1.0 khz) ? y fs ? 3.0 ? 6.5 mmhos output admittance (v ds = 15 vdc, v gs = 0, f = 1.0 khz) ? y os ? ? 40 ? mhos forward transfer admittance (v ds = 15 vdc, v gs = 0, f = 200 mhz) ? y fs ? ? 5.6 ? mmhos reverse transfer admittance (v ds = 15 vdc, v gs = 0, f = 200 mhz) ? y rs ? ? 1.0 ? mmhos input capacitance (v ds = 20 vdc, ? v gs = 1.0 vdc) c iss ? 3.0 ? pf reverse transfer capacitance (v ds = 20 vdc, ? v gs = 1.0 vdc, f = 1.0 mhz) c rss ? 0.7 ? pf output capacitance (v ds = 20 vdc, ? v gs = 1.0 vdc, f = 1.0 mhz) c oss ? 0.9 ? pf cut ? off frequency (note 1) (v ds = 15 vdc, v gs = 0) f (yfs) ? 700 ? mhz 1. the frequency at which g fs is 0.7 of its value at 1 khz.
BF245A, bf245b http://onsemi.com 485 figure 1. input admittance (y is ) figure 2. reverse transfer admittance (y rs ) common source characteristics admittance parameters (v ds = 15 vdc, t channel = 25 c) figure 3. forward transadmittance (y fs ) figure 4. output admittance (y os )
BF245A, bf245b http://onsemi.com 486 figure 5. s 11s figure 6. s 12s figure 7. s 21s figure 8. s 22s common source characteristics s ? parameters (v ds = 15 vdc, t channel = 25 c, data points in mhz)
BF245A, bf245b http://onsemi.com 487 figure 9. input admittance (y ig ) figure 10. reverse transfer admittance (y rg ) common gate characteristics admittance parameters (v dg = 15 vdc, t channel = 25 c) figure 11. forward transfer admittance (y fg ) figure 12. output admittance (y og )
BF245A, bf245b http://onsemi.com 488 figure 13. s 11g figure 14. s 12g figure 15. s 21g figure 16. s 22g common gate characteristics s ? parameters (v ds = 15 vdc, t channel = 25 c, data points in mhz)
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